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SiHK100N65E - Power MOSFET

Features

  • 4th generation E series technology.
  • Low figure-of-merit (FOM) Ron x Qg.
  • Low effective capacitance (Co(er)).
  • Reduced switching and conduction losses.
  • Avalanche energy rated (UIS).
  • Kelvin connection for reduced gate noise.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiHK100N65E
Manufacturer Vishay
File Size 229.04 KB
Description Power MOSFET
Datasheet download datasheet SiHK100N65E Datasheet
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www.vishay.com SiHK100N65E Vishay Siliconix E Series Power MOSFET PowerPAK® 10 x 12 TAB Drain tab 8 4567 23 1 Gate pin 1 Driver source pin 2 Source pin 3 to 8 N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 62 16 15 Single 0.087 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.
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