SiHK045N60E Description
SiHK045N60E Vishay Siliconix E Series Power MOSFET Drain tab Gate pin 1 Driver source pin 2 Source pin 3 to 8 N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 98 28 14 Single 0.043.
SiHK045N60E Key Features
- 4th generation E series technology
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance