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SiHK045N60E
Vishay Siliconix
E Series Power MOSFET
Drain tab
Gate pin 1
Driver source pin 2 Source
pin 3 to 8
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
98 28 14 Single
0.043
FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance
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SiHK045N60E Datasheet
