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SiHK085N60EF - Power MOSFET

Key Features

  • 4th generation E series technology.
  • Low figure of merit (FOM) Ron x Qg.
  • Low effective capacitance (Co(er)).
  • Reduced switching and conduction losses.
  • Avalanche energy rated (UIS).
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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www.vishay.com SiHK085N60EF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode Drain tab Gate pin 1 Driver source pin 2 Source pin 3 to 8 N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 63 17 9 Single 0.075 FEATURES • 4th generation E series technology • Low figure of merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.