Download SiHP21N60EF Datasheet PDF
SiHP21N60EF page 2
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SiHP21N60EF page 3
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SiHP21N60EF Key Features

  • Fast body diode MOSFET using E series
  • Reduced trr, Qrr, and IRRM
  • Low figure-of-merit (FOM): Ron x Qg
  • Low input capacitance (Ciss)
  • Increased robustness due to low Qrr
  • Ultra low gate charge (Qg)
  • Avalanche energy rated (UIS)
  • Material categorization: for definitions of pliance

SiHP21N60EF Description

SiHP21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 84 14 24 Single TO-220AB 0.176 D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free.