SiHR120N60E Description
Kelvin connection Pin 1 to 2: source N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 44 13 7 Single 0.104.
SiHR120N60E Key Features
- 4th generation E series technology
- Low figure of merit (FOM) Ron x Qg
- Low effective capacitance (Co(er))
- Reduced switching and conduction losses
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance