SiHS90N65E Description
SiHS90N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 591 84 160 Single 0.025 SUPER-247 D S D G G S N-Channel MOSFET.
SiHS90N65E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance