SiHU4N80E Overview
SiHU4N80E Vishay Siliconix E Series Power MOSFET IPAK (TO-251) D D G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 1.1 32 4 6 Single.
SiHU4N80E Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance