SiHU4N80AE Description
SiHU4N80AE Vishay Siliconix E Series Power MOSFET IPAK (TO-251) D GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 16.5 3 5 Single 1.25.
SiHU4N80AE Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low effective capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of pliance