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SiR184LDP - N-Channel MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS - Qg figure of merit (FOM).
  • Tuned for the lowest RDS - Qoss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiR184LDP
Manufacturer Vishay
File Size 171.63 KB
Description N-Channel MOSFET
Datasheet download datasheet SiR184LDP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiR184LDP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 60 0.0054 0.0083 12.3 73 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure of merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.