SiR424DP Description
SiR424DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0055 at VGS = 10 V 0.0074 at VGS = 4.5 V ID (A) 30a 30a Qg (Typ.) 9.6.
SiR424DP Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- 100 % UIS Tested
- pliant to RoHS Directive 2002/95/EC