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SIR422DP - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 40V.
  • ID = 40 A (VGS = 10V).
  • RDS(ON) ＜ 7.5 mΩ (VGS = 10V).
  • RDS(ON) ＜ 9 mΩ (VGS = 4.5V) D G S PowerPAK ® SO-8 (DFN5X6) 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bottom View.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-C.

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SMD Type N-Channel MOSFET SIR422DP (KIR422DP) MOSFET ■ Features ● VDS (V) = 40V ● ID = 40 A (VGS = 10V) ● RDS(ON) ＜ 7.5 mΩ (VGS = 10V) ● RDS(ON) ＜ 9 mΩ (VGS = 4.5V) D G S PowerPAK ® SO-8 (DFN5X6) 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bottom View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Tc=25℃ Tc=70℃ Ta=25℃ Ta=70℃ L = 0.1 mH Tc=25℃ Tc=70℃ Ta=25℃ Ta=70℃ t ≤ 10 s Symbol VDS VGS ID IDM IAS EAS PD RthJA RthJC TJ Tstg Rating 40 ±20 40 40 20.5 16.4 70 30 45 34.7 22.2 5 3.2 25 3.