| Part Number | SIR422DP Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
N-Channel MOSFET SIR422DP (KIR422DP)
MOSFET
■ Features
● VDS (V) = 40V
● ID = 40 A (VGS = 10V)
● RDS(ON) ＜ 7.5 mΩ (VGS = 10V)
● RDS(ON) ＜ 9 mΩ (VGS = 4.5V)
D
G S
PowerPAK ® SO-8 (DF.
* VDS (V) = 40V * ID = 40 A (VGS = 10V) * RDS(ON) ＜ 7.5 mΩ (VGS = 10V) * RDS(ON) ＜ 9 mΩ (VGS = 4.5V) D G S PowerPAK ® SO-8 (DFN5X6) 6.15 mm D 8 D 7 D 6 D 5 S 1 S 5.15 mm 2 S 3 G 4 Bottom View * Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Vo. |
SIR422DP Datasheet and Specifications PDF
The SIR422DP is a N-Channel MOSFET.
Key Specifications
| Package | TO-262-3 |
|---|---|
| Mount Type | Surface Mount, Through Hole |
| Pins | 8 |
| Height | 1.12 mm |
| Length | 5.969 mm |
| Width | 5.0038 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | SIR422DP Datasheet |
|---|---|
| Description | N-Channel 40-V (D-S) MOSFET |
| Manufacturer | Vishay |
| Overview |
N-Channel 40-V (D-S) MOSFET
SiR422DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0066 at VGS = 10 V 40
0.008 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a 40 40
Qg (Typ.) 16.1 nC
6.15 mm
D.
* Halogen-free According to IEC 61249-2-21 Definition * TrenchFET® Power MOSFET * 100 % Rg Tested * 100 % UIS Tested * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * POL * Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Paramet. |