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SiR494DP
Vishay Siliconix
N-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 12 RDS(on) (Ω) 0.0012 at VGS = 10 V 0.0017 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 50 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
• DC/DC • OR-ing
D
G
Bottom View Ordering Information: SiR494DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
SiR494DP Datasheet
