SiR812DP Description
SiR812DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. SiR812DP-T1-GE3 (lead (Pb)-free and halogen-free).
SiR812DP Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization