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SiR812DP - N-Channel MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiR812DP
Manufacturer Vishay
File Size 382.90 KB
Description N-Channel MOSFET
Datasheet download datasheet SiR812DP Datasheet
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Full PDF Text Transcription

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www.vishay.com SiR812DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.00145 at VGS = 10 V 0.00200 at VGS = 4.5 V ID (A) a 60 60 PowerPAK® SO-8 Single D D8 D7 D6 5 Qg (TYP.) 109 nC 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiR812DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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