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SiR866DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0019 at VGS = 10 V 0.00255 at VGS = 4.5 V ID (A)a 60g 60g Qg (Typ.) 35.3 nC
FEATURES
• • • • • • Halogen-free TrenchFET® Gen III Power MOSFET Low RDS(on) PWM (Qgd and Rg) Optimized 100 % Rg Tested 100 % UIS Tested
RoHS
COMPLIANT
PowerPAK SO-8
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
• Fixed Telecom • Low-Side dc-to-dc • OR-ing
D
G
Bottom View Ordering Information: SiR866DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
SiR866DP Datasheet
