Click to expand full text
New Product
SiR890DP
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0029 at VGS = 10 V 0.0040 at VGS = 4.5 V ID (A)a 50g 50g Qg (Typ.) 20 nC
FEATURES
• • • • Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested
PowerPAK® SO-8
APPLICATIONS
• Low-Side MOSFET in Synchronous Buck dc-to-dc Converters - Game Machine
D
6.15 mm
S 1 2 3 S S
5.15 mm
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: SiR890DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.
SiR890DP Datasheet
