SiRC06DP Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - Sky FET® with monolithic Schottky diode - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Personal puters and servers - Synchronous buck - Synchronous rectification - DC/DC conversion Schottky Diode S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAK SO-8 Si RC06DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 300 μs) Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering remendations (peak temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.3 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS IDM IS IAS EAS TJ, Tstg LIMIT 30 +20, -16 60 g 60 g 32 b, c 25.6 b, c 100 60 g 7.1 b, c 15 11.25 50 32 5 b, c 3.2 b, c -55 to...