SiRC10DP Description
SiRC10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET With Schottky Diode PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ.
SiRC10DP Key Features
- TrenchFET® Gen IV power MOSFET
- SKYFET® with monolithic Schottky diode
- 100 % Rg and UIS tested
- Material categorization