SiRC10DP - N-Channel MOSFET

Features

TrenchFET® Gen IV power MOSFET.
SKYFET® with monolithic Schottky diode.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	SiRC10DP
Manufacturer	Vishay
File Size	228.86 KB
Description	N-Channel MOSFET
Datasheet	SiRC10DP Datasheet

📁 Similar Datasheet

SIR-320ST3F - Infrared light emitting diode (Rohm)
SIR-341ST3F - Infrared light emitting diode (Rohm)
SIR-34ST3F - Infrared light emitting diode (Rohm)
SIR-505STA47 - Infrared light emitting diode (Rohm)
SIR-563ST3F - Infrared light emitting diode (Rohm)
SIR-568ST3 - Infrared light emitting diode (Rohm)
SIR-568ST3F - Infrared light emitting diode (Rohm)
SIR-56ST3 - Infrared light emitting diode (Rohm)
SIR-56ST3F - Infrared light emitting diode (Rohm)
SIR19-315-TR8 - 0603 Package Infrared Chip LED (Everlight Electronics)

Other Datasheets by Vishay

SiRC06DP - N-Channel MOSFET
SiR104ADP - N-Channel 100V MOSFET
SiR104LDP - N-Channel MOSFET
SIR158DP - N-Channel MOSFET
SIR164DP - N-Channel MOSFET
SIR166DP - N-Channel MOSFET
SIR172ADP - N-Channel MOSFET
SIR172DP - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

www.vishay.com SiRC10DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET With Schottky Diode PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 30 0.0035 0.0052 11.2 60 a, g Single FEATURES • TrenchFET® Gen IV power MOSFET • SKYFET® with monolithic Schottky diode • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 17, 2024 |