SiRS4600DP Overview
SiRS4600DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8S Single D D8 D7 D6 5 6.00 mm 5.00 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V Qg typ.
SiRS4600DP Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Leadership RDS(on) minimizes power loss from
- 100 % Rg and UIS tested
- Enhance power dissipation and lower RthJC
- Material categorization: for definitions of pliance