SiS128LDN Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 2S 3S 4S G Bottom View 80 0.0156 0.0203 9.5 33.7 Single.
SiS128LDN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100 % Rg and UIS tested