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SiS128LDN - N-Channel 80V MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • Very low RDS x Qg figure-of-merit (FOM).
  • Tuned for the lowest RDS x Qoss FOM.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiS128LDN
Manufacturer Vishay
File Size 244.70 KB
Description N-Channel 80V MOSFET
Datasheet download datasheet SiS128LDN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiS128LDN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 2S 3S 4S G Bottom View 80 0.0156 0.0203 9.5 33.7 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS x Qg figure-of-merit (FOM) • Tuned for the lowest RDS x Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.