SiS184LDN Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 2S 3S 4S G Bottom View 60 0.0054 0.0083 12.3 69.4 Single.
SiS184LDN Key Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS
- Qg figure-of-merit (FOM)
- Tuned for the lowest RDS
- Qoss FOM
- 100 % Rg and UIS tested