SiS184LDN - N-Channel 60V MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
Very low RDS - Qg figure-of-merit (FOM).
Tuned for the lowest RDS - Qoss FOM.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiS184LDN n-channel 60v mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiS184LDN
Manufacturer	Vishay
File Size	245.73 KB
Description	N-Channel 60V MOSFET
Datasheet	SiS184LDN Datasheet

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Other Datasheets by Vishay

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com SiS184LDN Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® 1212-8 Single D D8 D7 D6 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration ORDERING INFORMATION Package Lead (Pb)-free and halogen-free 1 2S 3S 4S G Bottom View 60 0.0054 0.0083 12.3 69.4 Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.