SiS322DNT Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 30 0.0075 0.0120 6.9 38.3 f Single.
SiS322DNT Key Features
- TrenchFET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Thin 0.75 mm height
- Material categorization: for definitions of pliance please see .vishay./doc?99912