SiS932EDN Overview
(Ω) at VGS = 4.5 V RDS(on) max. (Ω) at VGS = 2.5 V Qg typ.
SiS932EDN Key Features
- TrenchFET® power MOSFET
- Typical ESD (HBM): 1900 V
- 100 % Rg and UIS tested
- Material categorization
Datasheet Details
| Part number | SiS932EDN |
|---|---|
| Datasheet | SiS932EDN-Vishay.pdf |
| File Size | 257.33 KB |
| Manufacturer | Vishay |
| Description | N-Channel 30V MOSFET |
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