SiSH101DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -30 0.0072 0.0130 32 -35 d Single.
SiSH101DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: