SiSH101DN
FEATURES
- Trench FET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization:
For definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Notebook adapter switch
- Notebook battery management
- Load switch
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8 Si SH101DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 300 μs) Continuous source-drain diode current Avalanche current Single-pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering remendations (peak temperature) e, f
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT
-30 ± 25 -35 d -35 d -16.9 a, b -13.6 a, b -80 -35 d -3a, b -20 20 52...
