SiSH103DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) d Configuration 1 4 3 S 2 S S G Bottom View -30 0.0089 0.015 23.3 -54 Single.
SiSH103DN Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: