SiSH402DN
FEATURES
- Trench FET® power MOSFET
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- DC/DC converter
- Notebook
- POL
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8 Si SH402DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Avalanche current Avalanche energy
L = 0.1 m H
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) d, e
VDS VGS
IDM IAS EAS IS
TJ, Tstg
30 ± 20 35 a, g 35 g 19 b, c 15 b, c 70 35 61 43 3.2 b, c 52 33 3.8 b, c 2 b, c -55 to +150 260
UNIT V
A m J A W...
