SiSH407DN Description
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ.
SiSH407DN Key Features
- TrenchFET® power MOSFET
- Low thermal resistance PowerPAK® package
- 100 % Rg and UIS tested
SiSH407DN is P-Channel MOSFET manufactured by Vishay .
| Part Number | Description |
|---|---|
| SiSH402DN | N-Channel 30V MOSFET |
| SiSH434DN | N-Channel MOSFET |
| SiSH101DN | P-Channel 30V MOSFET |
| SiSH103DN | P-Channel MOSFET |
| SiSH107DN | P-Channel 30V MOSFET |
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ.