SiZ200DT Overview
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ.
SiZ200DT Key Features
- TrenchFET® Gen IV power MOSFETs
- 100 % Rg and UIS tested
- Optimized Qgs/Qgs ratio improves switching
- Material categorization: for definitions of pliance please see .vishay./doc?99912