SiZ260DT Description
() at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ.
SiZ260DT Key Features
- TrenchFET® Gen IV power MOSFETs
- 100 % Rg and UIS tested
- Integrated MOSFET half bridge power stage
- Optimized Qgs/Qgs ratio improves switching characteristics
- Material categorization: for definitions of pliance please see .vishay./doc?99912