Full PDF Text Transcription for SiZ320DT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiZ320DT. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com SiZ320DT Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFETs PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 ...
View more extracted text
S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration CHANNEL-1 CHANNEL-2 25 25 0.00830 0.00424 0.01270 0.00658 4.3 7.9 30 40 Dual FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
SiZ320DT Datasheet
