SiZ322DT Key Features
- TrenchFET® Gen IV power MOSFET
- High side and low side MOSFETs form optimized bination for 50 % duty cycle
- Optimized RDS
- Qg and RDS
- Qgd FOM elevates efficiency for high frequency switching
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance