SiZ340DDT
FEATURES
- Trench FET® Gen IV power MOSFETs
- 100 % Rg and UIS tested
- Power PAIR® integrated half-bridge MOSFET power stage
- Optimized Qgd/Qgs ratio improves switching characteristics
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- CPU core power
- puter / server peripherals
- POL
- Synchronous buck converter
- Tele DC/DC
D1
G1
N-Channel 1 MOSFET
S1/D2
G2
N-Channel 2 MOSFET S2
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAIR 3 x 3 Si Z340DDT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-source voltage Gate-source voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current (100 μs pulse width) Continuous source drain diode current Single pulse avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range Soldering remendations (peak temperature) d
TC = 25 °C TC = 70...
