Full PDF Text Transcription for SiZ342BDT (Reference)
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www.vishay.com SiZ342BDT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET PowerPAIR® 3 x 3 G2 S2 8 S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 ...
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S2 7 S2 6 5 S1/D2 (Pin 9) 3 mm 1 3 mm Top View D1 1 4 3 2 G1 D1 D1 D1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 30 0.00965 0.0145 4 32.9 a Dual ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES • TrenchFET® Gen IV power MOSFET • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
SiZ342BDT Datasheet
