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SiZ926DT - Dual N-Channel MOSFETs

Features

  • TrenchFET® Gen IV power MOSFETs.
  • 100 % Rg and UIS tested.
  • Optimized Qgs/Qgs ratio improves switching characteristics.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZ926DT
Manufacturer Vishay
File Size 230.00 KB
Description Dual N-Channel MOSFETs
Datasheet download datasheet SiZ926DT Datasheet
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Full PDF Text Transcription

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www.vishay.com SiZ926DT Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFETs PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm Top View D1 1 4 D1 3 D1 2 D1 G1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration CHANNEL-1 CHANNEL-2 25 25 0.00480 0.00220 0.00790 0.00335 5.9 12.5 40 60 Dual FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Optimized Qgs/Qgs ratio improves switching characteristics • Material categorization: for definitions of compliance please see www.vishay.
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