SiZF916DT
SiZF916DT is Dual N-Channel MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen IV power MOSFET
- Sky FET® low-side MOSFET with integrated
Schottky
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (n C) ID (A) a Configuration
CHANNEL-1 CHANNEL-2
30 30
7 29.3
40 60
Dual
APPLICATIONS
- CPU core power
N-Channel 1 MOSFET
- puter / server peripherals GHS/G1
- POL
G1Return/S1
- Synchronous buck converter
- Tele DC/DC
GLS/G2
N-Channel 2 MOSFET
VIN/D1
VSW/S1-D2
Schottky Diode GND/S2
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAIR 6 x 5F Si ZF916DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-source...
