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SiZF916DT - Dual N-Channel MOSFET

Key Features

  • TrenchFET® Gen IV power MOSFET.
  • SkyFET® low-side MOSFET with integrated Schottky.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZF916DT
Manufacturer Vishay
File Size 250.29 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiZF916DT Datasheet

Full PDF Text Transcription for SiZF916DT (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiZF916DT. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com SiZF916DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with in...

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RES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.00400 0.00125 0.00670 0.00175 7 29.

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