Full PDF Text Transcription for SiZF918DT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SiZF918DT. For precise diagrams, and layout, please refer to the original PDF.
www.vishay.com SiZF918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at ...
View more extracted text
CT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.0040 0.0019 0.0067 0.0027 7 17.3 40 60 Dual FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.