SiZF918DT Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - Sky FET® low side MOSFET with integrated Schottky - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - CPU core power N-Channel 1 MOSFET - puter / server peripherals GHS/G1 - POL - Synchronous buck converter G1Return/S1 - Tele DC/DC VIN/D1 VSW/S1-D2 GLS/G2 Schottky Diode N-Channel 2 MOSFET GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Power PAIR 6 x 5F Si ZF918DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering remendations (peak temperature) d,...