SiZF918DT Description
SiZF918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ.
SiZF918DT Key Features
- TrenchFET® Gen IV power MOSFET
- SkyFET® low side MOSFET with integrated
- 100 % Rg and UIS tested