The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.vishay.com
V10PL45-M3
Vishay General Semiconductor
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.28 V at IF = 5 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
ADDITIONAL RESOURCES
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package
10 A 45 V 200 A 0.35 V 150 °C SMPC (TO-277A)
Circuit configuration
Single
FEATURES
• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: for definitions of compliance
please see www.vishay.
V10PL45-M3 Datasheet
