V10PL45-M3 Datasheet | Vishay

.vishay. Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A eSMP® Series 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 ADDITIONAL RESOURCES 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A 45 V 200 A 0.35 V 150 °C SMPC (TO-277A) Circuit configuration Single Features - Very low profile - typical height of 1.1 mm - Ideal for automated placement - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - Material...