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V10PL45
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.28 V at IF = 5 A
FEATURES
TMBS®
K
eSMP® Series
• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation
1 2
TO-277A (SMPC)
K Cathode Anode 1 Anode 2
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2011/65/EU • Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 10 A 45 V 200 A 0.
V10PL45 Datasheet
