V10PL45 Description
Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.
V10PL45 Key Features
- Very low profile
- typical height of 1.1 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- pliant to RoHS Directive 2011/65/EU
- Halogen-free according to IEC 61249-2-21 definition