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V12PM6 Datasheet Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: .vishay. V12PM6 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 6 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 12.0 A VRRM 60 V IFSM VF at IF = 12.0 A (TA = 125 °C) 200 A 0.52 V TJ max.

Datasheet Details

Part number V12PM6
Manufacturer Vishay
File Size 102.23 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet V12PM6-Vishay.pdf

Key Features

  • Very low profile - typical height of 1.1 mm Available.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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V12PM6 Distributor