• Part: V12W60C-M3
  • Description: Dual Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 118.92 KB
Download V12W60C-M3 Datasheet PDF
Vishay
V12W60C-M3
V12W60C-M3 is Dual Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
FEATURES - Trench MOS Schottky technology - Ideal for automated placement - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package 2x6A 60 V 90 A 0.47 V 150 °C TO-252 (D-PAK) Diode variation Dual mon cathode MECHANICAL DATA Case: TO-252 (D-PAK) Molding pound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, Ro HS-pliant, and mercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Operating junction and storage temperature range TJ, TSTG V12W60C 60 12 6 -40 to +150 UNIT V A A °C Revision: 04-Dec-13 1 Document Number: 89972 For technical questions within your region: Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT .vishay./doc?91000 .vishay. Vishay General...