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V15PM12 - Trench MOS Barrier Schottky Rectifier

Key Features

  • Very low profile - typical height of 1.1 mm Available.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

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Datasheet Details

Part number V15PM12
Manufacturer Vishay
File Size 105.29 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V15PM12 Datasheet

Full PDF Text Transcription for V15PM12 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for V15PM12. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com V15PM12 Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 5 A eSM...

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MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 5 A eSMP® Series K 1 2 SMPC (TO-277A) K Cathode Anode 1 Anode 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) 15 A VRRM 120 V IFSM 220 A VF at IF = 15 A (125 °C) 0.63 V TJ max. Package 175 °C SMPC (TO-277A) Circuit configuration Single FEATURES • Very low profile - typical height of 1.

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