V20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).

V20100S-E3 high voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V20100S-E3
Manufacturer	Vishay
File Size	212.08 KB
Description	High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V20100S-E3 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
V201B1-L01	TFt LCD	CHI MEI
V201B1-L02	TFT LCD Module	Chi Mei
V201B1-L03	LCD Module	CHI MEI
V201HA32	Varistor	Littelfuse
V201HA40	Varistor	Littelfuse

Other Datasheets by Vishay

Part Number	Description
V20100S	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100SG	High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V20100C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
V20120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20100S 123 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100S NC K A HEATSINK DESIGN SUPPORT TOOLS VI20100S PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A 100 V 250 A 0.