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V20M120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder dip 275 °C max. 10 s, per JESD 22-B106.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V20M120C
Manufacturer Vishay
File Size 146.97 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V20M120C Datasheet

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Full PDF Text Transcription

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www.vishay.com V20M120C, VI20M120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TO-220AB TMBS ® TO-262AA K 3 2 1 V30M120C PIN 1 PIN 2 PIN 3 CASE 3 2 1 VI30M120C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 10 A 120 V 120 A VF at IF = 10 A 0.64 V TJ max. Package 175 °C TO-220AB, TO-262AA Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.
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