V20M120M-E3
Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Part: V20M120M-E3
- Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 93.72 KB