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V3PAN50-M3 - Surface Mount Trench MOS Barrier Schottky Rectifier

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Datasheet Details

Part number V3PAN50-M3
Manufacturer Vishay
File Size 131.61 KB
Description Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V3PAN50-M3 Datasheet

Overview

www.vishay.com V3PAN50-M3 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® SMPATM Top View Bottom View DO-221BC (SMPA) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3.0 A (TA = 125 °C) TJ max.

Package 3.0 A 50 V 80 A 0.

Key Features

  • Very low profile - typical height of 0.95 mm.
  • Ideal for automated placement.
  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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