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V40100G Datasheet PDF

Vishay V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Part No. V40100G
Datasheet V40100G Download
Manufacturer
Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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V40100G datasheet page 1 preview

FEATURES

● Trench MOS Schottky technology
● Low forward voltage drop, low power losses
● High efficiency operation
● Low thermal resistance
● Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
● Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
● Material categorization: for definitions of compliance please see

TYPICAL APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. MECHANICALDATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB) and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum 

MAXIMUM RATINGS

(TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V40100G VF40100G VB40100G VI40100G UNIT Maximum repetitive peak reverse voltage VRRM 100 V Maximum average forward rectified current (fig.
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