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V40100K - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • 150 °C high performance Schottky diode.
  • Very low forward voltage drop.
  • Optimized VF vs. IR trade off for high efficiency.
  • Increased ruggedness for reverse avalanche capability.
  • Negligible switching losses.
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number V40100K
Manufacturer Vishay
File Size 125.84 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet V40100K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V40100K Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® TO-220AB PIN 1 PIN 3 3 2 1 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A at TJ = 125 °C TJ max. Package 2 x 20 A 100 V 250 A 0.63 V 150 °C TO-220AB Diode variation Dual common cathode FEATURES • 150 °C high performance Schottky diode • Very low forward voltage drop • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability • Negligible switching losses • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.