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V40100PG
New Product
Vishay General Semiconductor
www.DataSheet4U.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.420 V at IF = 5 A
FEATURES • • • • • • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
3 2 1
TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection.