Datasheet Summary
.vishay.
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 5 A
TMBS®
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Solder dip 275 °C max. 10 s, per JESD 22-B106
- Material categorization: For definitions of pliance please see .vishay./doc?99912
TO-3PW
PIN 1 PIN 3
PIN 2 CASE
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
100 V
IFSM EAS at L = 100 mH
300 A...
