Datasheet Summary
New Product
.. Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.372 V at IF = 5 A
Features
TMBS®
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
3 2 1
- Low thermal resistance
- Solder dip 260 °C, 40 s
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100...
